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dynamic random access memory造句

"dynamic random access memory"是什么意思   

例句与造句

  1. Sdram synchronous dynamic random access memory
    同步动态随机存取存储器同步内存
  2. High speed dynamic random access memory , hsdram
    高速动态随机存取记
  3. Dram dynamic random access memory
    动态随机存取存储器
  4. Dynamic random access memory dram
    动态随机存取存储器
  5. Dynamic random access memory , dram
    动态随机存取内存
  6. It's difficult to find dynamic random access memory in a sentence. 用dynamic random access memory造句挺难的
  7. Dynamic random access memories
    动态随机存取存储器
  8. Dram dynamic random access memory
    动态随机存储器
  9. Dynamic random access memory
    动态随机存
  10. Barium strontium titanate ( bst ) shows high dielectric constant and low dissipation factor and holds great promise for wide applications in dynamic random access memory ( dram ) , transducer and infrared detector
    钛酸锶钡( bst )薄膜具有较高的介电常数和较低的介质损耗,在动态随机存储器( dram ) 、传感器、探测器等方面应用前景广阔。
  11. Barium strontium titanate ( bst ) film has been investigated extensively for the application in the high density dynamic random access memories ( drams ) . one of the most crucial electrical parameters of these films has been the leakage current level of dram cells
    钛酸锶钡( ba _ ( 1 - x ) sr _ xtio _ 3或bst )以其高介电常数、低损耗,介电响应快、疲劳强度大等优点,在下一代动态随机存储器( dram )上的应用前景非常广阔,是近年来人们研究的热点。
  12. Lead lanthanum titanate ( plt ) ferroelectric thin film has superior pyroelectric , ferroelectric , piezoelectric and photoelectric characteristics , and it has been wildly used for various electromic equipments , such as pyroelectric ir detectors , dynamic random access memories ( drams ) and electrooptic apparatus
    采用射频磁控溅射法,分别通过快速退火和传统退火工艺,在5英寸的pt / ti / sio2 / si基片上制得具有不同微结构与性能的plt薄膜。
  13. Recently , the n / n + and p / p + epitaxial structures have been applied in the study and production of microwave transistor and ultra - large - scale integrated circuits ( ulsi ) , and the memorial maintain time of dynamic random access memory can be improved , latch - up effect and soft - error induced by a particles can be resolved through the combination of epitaxy and ig
    采用这种结构与ig工艺相结合,能够大大地提高动态存储器dram的记忆保持时间,是解决电路中闩锁效应( latch - up )和粒子引起的软失效( soft - error )的最佳途径。

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Last modified time:Tue, 19 Aug 2025 00:29:56 GMT